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Light emission from group-III nitride semiconductors is of crucial interest, as it underpins efficient LED lighting. Perhaps surprisingly, the underlying physics here remains poorly understood. This study demonstrates experimentally that the spontaneous emission of III-nitrides has an unexpected behavior. An advanced numerical model reveals that this is caused by the interplay between two phenomena: The strong disorder in III-nitride compounds leads to carrier localization, and the pronounced Coulomb interaction affects the electron-hole coupling. This insight enables a deeper understanding of III-nitride luminescence, to promote optimization of future LEDs.
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David et al. (2019) studied this question.
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