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This research aims to explore the epitaxial growth of molybdenum disulfide on gallium nitride to create efficient semiconductor heterostructures.

February 11, 2016ACS Nano

Vertical 2D/3D Semiconductor Heterostructures Based on Epitaxial Molybdenum Disulfide and Gallium Nitride

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This research aims to explore the epitaxial growth of molybdenum disulfide on gallium nitride to create efficient semiconductor heterostructures.
Epitaxial growth of molybdenum disulfide directly on gallium nitride
Characterization using photoluminescence, Raman spectroscopy, atomic force microscopy, and X-ray photoelectron spectroscopy
Evaluation of electrical conductivity in the out-of-plane direction.
Monolayer MoS2 exhibits a 20-fold enhancement of photoluminescence in larger triangle regions
Estimated MoS2/GaN contact resistivity is less than 4 Ω·cm²
MoS2 monolayer supports a current spreading diameter of approximately 1 μm.

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Randomized trial reveals efficient vertical current flow in semiconductor heterostructures, suggesting high-performance device potential.

Ruzmetov et al. (2016) studied this question.

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