A normal-incidence type-II indirect AlAs/Al0.5Ga0.5As quantum-well infrared photodetector grown on (110) GaAs by molecular-beam epitaxy for mid- and long-wavelength multispectrum detection has been developed. The normal-incident excitation of long-wavelength intersubband transition was achieved in the [110] X-band-confined AlAs quantum wells. Six absorption peaks including four from X-band to Γ-band intersubband resonant transitions were observed at wavelengths, λp1−6=2.2, 2.7, 3.5, 4.8, 6.5, and 12.5 μm. The resonant transport from X band to Γ band gives rise to high photoconductive gain, which is highly desirable for focal plane arrays image sensor applications.
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Wang et al. (1993) studied this question.
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