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February 1, 1987IEEE Journal of Quantum Electronics

Fabrication and lasing characteristics of 0.67 µm GaInAsP/AlGaAs visible lasers prepared by liquid phase epitaxy on

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Abstract

GaInAsP/AlGaAs lasers emitting at 0.67 μm in wavelength were fabricated on n-type

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Kishino et al. (1987) studied this question.

synapsesocial.com/papers/6a22fabae319d28108d26ae0 https://doi.org/10.1109/jqe.1987.1073313

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