We have fabricated GaInAsP/InP compressive strained quantum-well two-dimensional (2D) photonic crystals, which are expected to exhibit an effective spontaneous emission control without discrimination by surface recombination. Electron beam lithography and methane-based reactive ion beam etching techniques were used to form submicron periodic structures. The photoluminescence from the formed structures was almost as strong as that from an as-grown wafer. In addition, it was observed that the emission inside the substrate plane was transverse-magnetic-polarized when the designed photonic bandgap for transverse-electric (TE) polarization overlapped with the emission frequency, while the emission from the as-grown wafer was TE-polarized. These results support the theory of spontaneous emission control effect by quantum confinement of photons and electrons.
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Baba et al. (1996) studied this question.