This paper reviews emerging nonvolatile random access memories (RAM) in recent years. It first benchmarks ferroelectric RAM (FeRAM), phase change RAM (PCRAM), resistive RAM (ReRAM), and spin-torque-transfer magnetic RAM (STT-MRAM), discussing each RAM's features and its applications. Then current status of spintronics developments including not only STT-MRAM but also nonvolatile logic LSI is described, which are particularly suitable for working memory applications.
Endoh et al. (Mon,) studied this question.