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Develops advanced composites that improve dimensional stability and dielectric performance for integrated circuits, suggesting a scalable manufacturing approach.
The development of advanced electronic packaging substrates featuring a low coefficient of thermal expansion (CTE), low dielectric loss ( D f ), and excellent thermal stability is essential for meeting the escalating demands of high-frequency communication and ultra-high-density interconnections in modern integrated circuits. Herein, a facile and effective interfacial engineering strategy is reported, in which continuous glass fiber fabric (GFF) is surface-modified with an amino silane coupling agent and subsequently incorporated into a SiO 2 /bismaleimide-triazine (BT-C) matrix. Precise control of the silane concentration effectively reduced the formation of micro-voids and interfacial defects, establishing a dense covalently bonded network that enhanced the interfacial compatibility between the inorganic GFF and the BT-C matrix. This optimized interface facilitates efficient stress transfer and severely restricts the thermal expansion of surrounding polymer chains. The fabricated BT-based composites exhibit outstanding dimensional stability and high-frequency dielectric properties, with the in-plane CTE lowered to 9.4 ppm/°C, the D f at 10 GHz reduced to 0.0037, and a glass transition temperature exceeding 278 °C. Moreover, the composite demonstrates superior moisture resistance and enhanced through-plane thermal conductivity (0.79 W/m·K). This work provides a highly scalable and robust strategy for fabricating high-performance substrates tailored for next-generation high-frequency integrated circuit packaging.
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Wang et al. (2026) studied this question.
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