X-Ray Impact on Generation-Recombination Low-Frequency Noise Components for Advanced Si/SiGe:C HBTs

This study presents an investigation of X-ray dose impact on Low-Frequency Noise Generation-Recombination components for NPN Si/SiGe:C heterojunction bipolar transistors (HBTs) developed in two BiCMOS technologies. Generation-Recombination (G-R) components are examined in detail both before and after irradiation. Compact modeling for these excess noise components is established after X-ray exposure. They are studied over the irradiation process as a function of current biases and geometrical parameters to locate the noise sources. A thermal annealing process at two temperatures, 100 ∘ C and 130 ∘ C, is accomplished to investigate any possible healing effects on Low-Frequency Noise spectra.