Investigation of the structural, morphological, dielectric, and electrical characteristics of BiNi0.5Sn0.5O3 material

A brief analysis of BiNi 0.5 Sn 0.5 O 3 has been discussed in this communication. The synthesis of BiNi 0.5 Sn 0.5 O 3 material was conducted by the solid-state reaction method. Along with synthesis, structural, morphological, and dielectric properties are discussed here. XRD analysis shows sharp diffraction peaks, confirming the crystalline nature of the material. The material BiNi 0.5 Sn 0.5 O 3 shows the presence of multiple phases with cubic and trigonal structures. The distribution of grains throughout the surface is shown by scanning electron microscopy, with an average grain size of 0.33 µm. EDX analysis verifies the existence of all the essential elements. The dielectric parameters show an increasing trend with rising temperature. The dielectric constant attains a maximum value of 5431 at 500 °C. The impedance spectra indicate that the material shows Negative Temperature Coefficient of Resistance (NTCR) behaviour within the tested frequency range, similar to that of semiconductors. The plot of frequency-dependent AC conductivity adheres to Jonscher's power law. AC conductivity confirms that charge carriers adhere to the CBH (Correlated Barrier Hopping) conduction mechanism. Modulus spectroscopy reveals the existence of non-Debye-type relaxation in the material. The material's ferroelectric response was evaluated at room temperature, revealing a remanent polarization of 0.027 µC/cm². BiNi 0.5 Sn 0.5 O 3 can be used in various electronic devices based on these observed electrical properties.