High-performance InAlN/GaN HEMTs on silicon substrate with high f T × L g

We report an 80 nm gate-length In0.17Al0.83N/GaN high-electron mobility transistor (HEMT) on silicon substrate with a record low gate leakage current of 7.12 × 10−7 A mm−1, a record high on/off current ratio of 1.58 × 106, and a steep subthreshold swing of 65 mV dec−1, which are excellent features among the reported InAlN/GaN HEMTs on Si. Due to the excellent DC performance, a current gain cutoff frequency fT of 200 GHz is achieved, resulting in fT × Lg = 16 GHz μm for GaN HEMTs on Si which to the best of our knowledge is a new record.