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December 1, 2012

Self-aligned-gate GaN-HEMTs with heavily-doped n-GaN ohmic contacts to 2DEG

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Authors

KSK. ShinoharaTeledyne Technologies (United States)DRD. ReganTeledyne Technologies (United States)ACA. CorrionHRL Laboratories (United States)

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Shinohara et al. (2012) studied this question.

synapsesocial.com/papers/6a26636f65fa33c2fbd5bde6https://doi.org/10.1109/iedm.2012.6479113
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