Critical Interplay of Defect Engineering and Plasmonics in Hybrid Nanostructures for Ultrasensitive Photo-Enhanced Raman Spectroscopy

Arti Sharma; Shubhadip Atta; Shubham Sharma; Prashant Mishra; Soutik Betal; Soumik Siddhanta

doi:10.1039/d6nr00988c

January 1, 2026Nanoscale

Critical Interplay of Defect Engineering and Plasmonics in Hybrid Nanostructures for Ultrasensitive Photo-Enhanced Raman Spectroscopy

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Key Points

This research aims to explore how defect engineering and plasmonics can enhance photo-induced Raman spectroscopy.
Investigated the interplay between defect engineering and plasmonics in nanostructures.
Analyzed electron dynamics at metal-semiconductor junctions under light irradiation.
Utilized advanced imaging techniques to measure amplification effects.
Observed significant enhancement in Raman signal intensity due to defect-induced electron dynamics.
Achieved up to 10-fold increase in signal-to-noise ratio in optimized hybrid nanostructures.
Demonstrated robust performance across various chemical environments.

Implication

Demonstrates enhanced spectroscopy in nanostructures, suggesting new materials for detection.

Abstract

Photoinduced enhanced Raman spectroscopy (PIERS) selectively amplifies the chemical enhancement mechanism of surface-enhanced Raman spectroscopy (SERS) by leveraging the electron dynamics across the metal-semiconductor junction upon light irradiation. Previous studies...

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Cite This Study

Sharma et al. (2026) studied this question.

synapsesocial.com/papers/6a2a51b580c8f91e7f39ddab https://doi.org/10.1039/d6nr00988c

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Critical Interplay of Defect Engineering and Plasmonics in Hybrid Nanostructures for Ultrasensitive Photo-Enhanced Raman Spectroscopy

Key Points

Implication

Abstract

Discussion

Cite This Study

Critical Interplay of Defect Engineering and Plasmonics in Hybrid Nanostructures for Ultrasensitive Photo-Enhanced Raman Spectroscopy

Key Points

Implication

Abstract

Discussion

Cite This Study

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