PbS Quantum Dot Film as Hole Transport Layer for Self-Powered AgBiS 2 Nanocrystal Photodetectors

Jun Zhang (48506); Zhiyi Zhang; Ling Chen; Jianxian Zhou; Yanping Lv; Ming Yang; Hao Wu; Qichong Zhang

doi:10.1039/d6cc02387h

January 1, 2026Chemical Communications

PbS Quantum Dot Film as Hole Transport Layer for Self-Powered AgBiS 2 Nanocrystal Photodetectors

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Key Points

To assess the performance of a PbS quantum dot film as a hole transport layer in self-powered AgBiS2 photodetectors.
Fabricated all-inorganic photodetector based on ZnO/AgBiS2/PbS-EDT.
Compared performance with reference device using Spiro-OMeTAD as HTL.
PbS-EDT HTL demonstrated higher stability and electrical conductivity than Spiro-OMeTAD.
Enhanced performance metrics were observed in the PbS-EDT configuration.

Implication

Evaluates PbS-EDT hole transport layer in AgBiS2 photodetectors, suggesting enhanced performance.

Abstract

We fabricated an all-inorganic self-powered photodetector based on ZnO/AgBiS2/PbS-EDT. Compared with the reference device employing Spiro-OMeTAD as the hole transport layer (HTL), the PbS-EDT HTL has higher stability, electrical conductivity...

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Cite This Study

(48506) et al. (2026) studied this question.

synapsesocial.com/papers/6a2cf500faef96ed7f057192 https://doi.org/10.1039/d6cc02387h

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PbS Quantum Dot Film as Hole Transport Layer for Self-Powered AgBiS 2 Nanocrystal Photodetectors

Key Points

Implication

Abstract

Discussion

Cite This Study

PbS Quantum Dot Film as Hole Transport Layer for Self-Powered AgBiS 2 Nanocrystal Photodetectors

Key Points

Implication

Abstract

Discussion

Cite This Study

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