Demonstrates enhanced formation of crystalline films in TMDCs, suggesting a new pathway for spintronic devices.
The wafer-scale synthesis of magnetic two-dimensional transition metal dichalcogenides (TMDCs) remains a critical challenge due to their metastability and the rapid oxidation of metallic precursors, which block conventional sulfurization routes. Chromium disulfide (CrS 2 ), in particular, is highly attractive for spintronic applications because of its robust room-temperature ferromagnetism, yet its wafer-scale growth has remained elusive. Here, we report a universal strategy using ZnS-derived sulfur monomers to overcome the chemical reaction barrier imposed by native oxide layer, enabling the selective formation of crystalline CrS 2 films across 2-in. wafers. The resulting films exhibit excellent uniformity, controllable thickness, and robust ferromagnetism above room temperature. Beyond CrS 2, this method demonstrates broad application by yielding wafer-scale VS 2, MnS, FeS 2, CoS 2, and the ternary CrCoS 4 with comparable quality. Our results establish a versatile and scalable synthesis platform for 2D magnetic TMDCs, opening a pathway toward their integration in advanced spintronic devices.
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Li et al. (2026) studied this question.
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