Ultrahigh‐Performance Mix‐Structure Ga ₂ O ₃ /ZnO Heterostructure Solar Blind UV Detector and Its Wide Applications in Multiples of Scenarios Under Different Conditions

Practical application of solar‐blind UV (220–280 nm) detectors in multiples of fields is key problem in UV optoelectronic technology. Herein, the performance of mix‐structure Ga 2 O 3 /ZnO and mix‐structure Ga 2 O 3 /Ga doped ZnO hetero‐structure detectors are firstly optimized, optimized mix‐structure Ga 2 O 3 /ZnO detector possesses high response (3010.2 A/W@235 nm, 40 V), low I dark (6.97× 10 −11 A @40 V), high I UV /I dark ratio (10 5 at 4.8 µW/cm 2 235 nm) simultaneously. The mechanisms of the device under different conditions are explored. Avalanche breakdown mechanism induced fast response and decay speeds (t r : 0.38 µs: t d1 : 2.47 µs) at pulse UV laser in the device under high voltage, which favored its application in UV communications. Fast response and decay speeds of the device at faint 254 nm light (t r : 25.95 s: t d1 : 23.05 s), is beneficial for its application in missile alarm, electrical fire alarm, ozone alarm, and so on. Because of high density of Holes are trapped within the device under 1 V bias and faint deep UV condition, the mix‐structure Ga 2 O 3 /ZnO heterostructure detector presented good performance in simulating complicated PPF、LTP behavior of synapses in human brains and ANN. The difference response and recovery mechanism of the Ga 2 O 3 /ZnO hetero‐structure detector under different conditions, is especially meaningful in actual applications of the device in various scenarios.