UV Response Mechanism of Ultra‐High Response Microstructure Ga₂O₃ Based Solar‐Blind UV Detector with Simple MSM Structure and the Applications of the Device in Various Scenes

The actual application of ultrahigh response Ga 2 O 3 solar‐blind UV detectors in various scenes is a key problem in the new generation revolution of the electronic and information industry. Herein, the mechanism for the high response Ag/Ga 2 O 3 /Ag detector (3.77 × 10 5 A W −1 @15 V at 230 nm) with mixed microstructures under different conditions is deeply explored, and the applications of the mixed‐structure Ga 2 O 3 device in various areas are studied. Hole‐trapping mechanism in the device under small voltage and faint UV conditions supports its application in neurosynaptic simulation. The fast response and recovery speed of the device under medium voltage and faint pulse UV conditions from the tunneling breakdown mechanism induced a giant prospect in UV communication of the device. Outstanding high I UV (35 mA) of the Ag/Ga 2 O 3 /Ag detector under high voltage at 254 nm from the avalanche breakdown mechanism, promotes its applications in missile alarming and ozone hole monitoring. The change in UV response mechanism in one simple structure Ag/Ga 2 O 3 /Ag detector with high density of nano crystalline Ga 2 O 3 /amorphous Ga 2 O 3 interfaces under different measurement condition, is especially meaningful in wide spread of high‐performance Ga 2 O 3 based detectors with mixed microstructures in various application scenarios (neurosynaptic simulation, UV information communication, missile alarming, ozone hole monitoring, et al.).