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Vertically Stacked Indium Gallium Zinc Oxide-Based Three-Dimensional Integrated Circuits | Synapse

July 5, 2026

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Vertically Stacked Indium Gallium Zinc Oxide-Based Three-Dimensional Integrated Circuits

YPYu PanPeking University WWWenhai WangHebei University of Architecture YSY SongPeking University

Puntos clave

This work aims to demonstrate the functionality of 3D integrated circuits using indium gallium zinc oxide with computing-in-memory capabilities.
Demonstrated functional computing-in-memory 3D circuits with inverter modules and DRAM components.
Utilized via-hole interconnects in the circuit design.
Focused on the integration of oxide semiconductors.
Successfully integrated inverter modules (tiers 1-2) and DRAM components (tiers 3-4) in the 3D circuits.
The demonstrated circuits show potential for advanced applications in electronics.

Resumen

. Combined with via-hole interconnects, we demonstrated functional computing-in-memory 3D circuits featuring inverter modules (tier 1-2) and dynamic random access memory (DRAM) components (tier 3-4). The work advances oxide semiconductors' applications in future advanced 3D circuits.

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Cite This Study

Pan et al. (Fri,) studied this question.

synapsesocial.com/papers/6a49f503f5d1d45b28800341 https://doi.org/https://doi.org/10.1021/acsnano.6c05009