Achieving Fermi-Level Depinning and Ideal Metal Contact in β -Ga ₂ O ₃ Devices via MXene Integration

vdW heterostructures were then constructed, in which the interfacial vdW barrier effectively blocks the metal-induced gap states, thereby enabling Fermi-level depinning with a high pinning factor of S = 0.60 and a continuous tuning of the Schottky barrier height from 0.15 to 3.12 eV. Furthermore, by intentionally engineering the interfacial bonding from vdW forces to covalent bonds, we demonstrate both widely tunable Schottky barriers and ideal ohmic contacts within the same system. This study provides a theoretical foundation for advanced semiconductor devices.