Demonstrates high-speed performance in MRAM technology, suggesting improvements for industrial use.
We present Everspin’s new spin-transfer torque (STT) MRAM product, with magnetic tunnel junction arrays optimized for low-latency industrial applications, including higher speed, lower error rate, and longer cycling endurance. Performance metrics demonstrated include high-speed functionality with symmetric read and write throughput of an unprecedented 400MB/s over the full operating temperature range from -40°C to +85°C, with sufficient data retention and cycling endurance for industrial applications.
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Ikegawa et al. (2022) studied this question.
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