Controllable Ge Hut Wires With Mobilities Exceeding 20 000 cm ² V ⁻ ¹ s ⁻ ¹

The controlled growth of high‐mobility semiconductor nanowires is essential for advancing high‐performance electrical and quantum devices. Here, site‐controlled growth of Ge hut wires with record mobility is achieved on pre‐patterned SiGe/Si (001) virtual substrates. These Ge wires self‐assemble into patterned trenches on strain‐relaxed SiGe/Si(001) substrates at growth temperatures below 400°C. Transport measurements reveal a hole mobility up to 22 900 cm 2 V − 1 s − 1 at 4.2 K. Furthermore, conductance quantization is observed in Ge hut wire devices with a channel length of 1.9 µm. These controllable, high‐mobility, low‐disorder Ge wires on Si(001) pave the way for scalable high‐performance quantum devices.