A Review of Double-Pulse Test Techniques for GaN Power Devices in High-Frequency Power Converters

The growing demand for high-efficiency, high-power-density converters in data centers, electric vehicle chargers, and renewable energy systems has accelerated the adoption of wide-bandgap (WBG) devices. Gallium nitride (GaN) transistors offer superior switching speed, lower losses, and higher power density compared with silicon (Si) devices. Accurate characterization of GaN switching dynamics is essential due to parasitic effects and transient phenomena affecting performance and reliability. The double-pulse test (DPT) is widely used to quantify critical parameters, including switching energy losses, dynamic RDS(on) and transient voltage, and current waveforms. This paper reviews DPT techniques for GaN devices, focusing on measurement methodologies, parasitic mitigation, and reliability considerations, providing practical guidance for optimizing high-frequency GaN-based power converters.