Ultralow‐Noise Perovskite Photodiodes Enabling High‐Fidelity Full‐Color Imaging

Perovskite photodiodes have attracted increasing attention for next‐generation imaging and sensing; however, their practical deployment remains hindered by elevated noise, device‐to‐device variability, and limited operational reliability compared to established silicon technologies. These limitations largely originate from interfacial defects and uncontrolled carrier recombination in solution‐processed perovskite films. Here we present a vacuum‐engineered perovskite photodiode architecture that enables ultralow‐noise operation with high reproducibility and imaging‐level performance. By constructing the perovskite structure through a controlled multilayer design, interfacial defect density is effectively suppressed, leading to reduced electrical noise and stable charge transport. The resulting devices exhibit an ultralow dark current density of 2.31 × 10 −11 A cm −2 at 0.2 V, external quantum efficiency exceeding 80% across the visible spectrum, and a wide linear dynamic range of 130 dB, together with a −3 dB bandwidth of 0.33 MHz. These performance characteristics enable high‐fidelity full‐color imaging using a single‐pixel scanning approach, demonstrating accurate image reconstruction with low noise. The devices further maintain over 80% of their initial performance after 500 h of continuous illumination, highlighting their operational stability. This work establishes a general strategy for achieving low‐noise and reliable perovskite photodetectors, providing a pathway toward scalable, high performance imaging systems beyond conventional silicon‐based technologies.