Vapor-Deposited Perovskite Photodiodes Integrated on Unconventional Substrates

Lead halide perovskites combine high optical absorption, tunable bandgaps, and long carrier diffusion lengths with simple and low-temperature processing, making them attractive for solid-state photodetectors. To date, most reported perovskite photodiodes have been fabricated in the superstrate (bottom-illumination) configuration, in which light enters the device through a transparent substrate. This geometry precludes direct integration with opaque platforms typical of imaging electronics, such as silicon complementary metal–oxide–semiconductor (CMOS) sensors or printed circuit boards (PCBs), as well as with thin-film transistor (TFT) backplanes, which may combine opaque and transparent regions. Here, we report fully vapor-deposited perovskite photodiodes employing a transparent top electrode prepared by pulsed laser deposition (PLD), enabling integration with both transparent and opaque substrates. Reference devices on glass reach a specific detectivity of 5 × 1012 Jones at –0.5 V and a linear dynamic range approaching 170 dB. We then transfer this architecture to commercial PCBs and show that, upon planarization with a polymer coating, high-performing devices can be grown even on these rough surfaces. Finally, we monolithically integrate a bifacial photodiode onto an TFT readout array and demonstrate a fully functional bifacial imager. Together, these results demonstrate a versatile platform for the integration of perovskite photodetectors onto arbitrary substrates and readout backplanes.