Simulation study analyzes radiation effects on silicon-nanowire devices, indicating a need for improved radiation hardening against single-event effects.
In this brief, we have analyzed the response of silicon-nanowire (Si-NW) gate-all-around (GAA) field-effect transistor to total ionizing dose (TID) effects and assessed the impact of single-event effects (SEEs) in simple inverter circuit built from such devices. The analysis of radiation effects is carried out with 3-D technology computer-aided design simulations. Reliability of n-channel and p-channel Si-NW MOSFET is investigated for TID effects with gamma ray exposure. The transient effects at the device level are studied for alpha particle and heavy-ion strikes. It is found that Si-NW MOSFET is inherently hardened to TID effects. This result is in concordance with the earlier reported experimental results. However, we found that Si-NW CMOS inverter is not as tolerant to SEE, as Si-NW MOSFET is to TID. This study highlights the need for radiation-hardened Si-NW FET circuits against SEE.
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Kaushal et al. (2012) studied this question.
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