Radiation Effects in Silicon‐On‐Insulator n‐p‐n Double‐Gate TFET: A Simulation Study

The impact of heavy‐ion radiation on Silicon‐on‐Insulator (SOI) n‐p‐n double‐gate tunnel field‐effect transistor (DG‐TFET) is analyzed in this work. The study investigates the transient behavior of the device under heavy‐ion strikes at multiple locations to determine the most sensitive region. The heavy‐ion generation rate and collected charge are extracted for different strike locations and further analyzed by varying the angle of incidence (0°, 30°, 45°, 60°, and 90°) at a constant linear energy transfer (LET) of 20 MeV‐cm 2 /mg. Additionally, the variation of LET is studied to observe its impact on charge collection and transient response.