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March 29, 2016Scientific ReportsOpen Access

P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas

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Authors

KZKexiong ZhangDalian University of TechnologyMSMasatomo SumiyaNational Institute for Materials ScienceMLMeiyong LiaoNational Institute for Materials Science

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Zhang et al. (2016) studied this question.

synapsesocial.com/papers/6a5e6485c697a92aca92ada6https://doi.org/10.1038/srep23683
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  3. 3P-Channel InGaN-HFET Structure Based on Polarization Doping2004 · 75 citations
  4. 4Fabrication of p-channel heterostructure field effect transistors with polarization-induced two-dimensional hole gases at metal–polar GaN/AlInGaN interfaces2014 · 87 citations