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Abstract ac electrical measurements are reported for the paraelectric phases of the ferroelectric CuInP2S6 and antiferroelectric CuCrP2S6. A complex permittivity analysis confirms previous dielectric results for CuInP2S6. Arrhenius behaviors with nearly identical activation energies were observed for the dc conductivities and modulus relaxation frequencies. A hopping mechanism for Cu(I) transport in these materials is thus suggested.
Maisonneuve et al. (Thu,) studied this question.