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Flat crystal ZnO thin films were prepared by chemical bath deposition technique onto glass substrates. XRD patterns of the films deposited at about 80 °C and annealed at 200 °C for 1 h in oxygen environment revealed the existence of polycrystalline hexagonal wurtzite phase with c-axis orientation of crystallites in the films. The crystallite size and lattice strain from X-ray line broadening profile were evaluated using the Scherrer method and Williamson–Hall method. Structural parameters such as dislocation density, stacking faults probability, lattice constants, lattice stress, unit cell volume, internal parameter, texture and number of crystallites per unit area have also been calculated. Surface morphology of the films was analyzed by scanning electron microscopy and atomic force microscopy. Photoluminescence spectrum at room temperature exhibited two luminescence centers, one is for UV emission (near band edge emission) located at 3.18 eV and another is for deep level emission located at 2.56 eV.
Thool et al. (Sun,) studied this question.