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The research investigates the thermal strain relaxation in GaN films and identifies intrinsic lattice constants of GaN free from strain.

Relaxation Process of the Thermal Strain in the GaN/α-Al2O3 Heterostructure and Determination of the Intrinsic Lattice Constants of GaN Free from the Strain

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Randomized trial examines thermal strain relaxation in GaN films, suggesting intrinsic properties of GaN.

The research investigates the thermal strain relaxation in GaN films and identifies intrinsic lattice constants of GaN free from strain.
Studied GaN film thickness ranging from 1 to 1200 µm
Analyzed the relaxation process based on thermal expansion coefficient differences in heterostructures
Measured lattice constants at varying film thicknesses.
Lattice constant c is 5.191 Å for GaN films less than a few microns thick
Lattice constant c decreases steadily with thickness, stabilizing above 150 µm
Intrinsic lattice constants for GaN identified as a0 = 3.1892±0.0009 Å and c0 = 5.1850±0.0005 Å.

Detchprohm et al. (1992) studied this question.

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