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Hall coefficients and electron conductivities of HgSe crystals annealed in a broad range of Hg and Se vapour pressures are measured at room and liquid nitrogen temperatures. The dominant point defects in HgSe are Hg interstitials and Se and Hg vacancies. Formation enthalpies of these defects are estimated by thermodynamical analysis and are compared with other II-VI compounds. (P-T-x) diagram and existence region are obtained by the present annealing experiments. The electron concentration is expressed in terms of the gas pressure and the treatment temperature.
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Kumazaki et al. (1976) studied this question.
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