Simulation Tool for the Prediction of Heavy Ion Cross Section of Innovative 130-nm SRAMs

The prediction of heavy ions cross sections of an innovative SRAM is carried out in a 130-nm CMOS technology. The work is realized with a simulation tool generally used to predict standard SRAM sensitivity. This simulation tool needs input parameters to describe both standard and innovative SRAM. From the standard to the innovative structure, input parameters are simply evaluated using SPICE simulations. Experimental and simulated cross sections are then shown to be in good agreement.