Optimized Al-doped TiO ₂ gate insulator for a metal-oxide-semiconductor capacitor on a Ge substrate

Dong Gun Kim; Cheol Hyun An; Sang Hyeon Kim; Dae Seon Kwon; Junil Lim; Woojin Jeon; Cheol Seong Hwang

doi:10.1039/d0tc04725b

January 1, 2021Journal of Materials Chemistry C

Optimized Al-doped TiO ₂ gate insulator for a metal-oxide-semiconductor capacitor on a Ge substrate

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Key Points

The aim is to evaluate the optimized aluminum-doped titanium dioxide as a gate insulator for Ge MOSFET applications.
Examined aluminum-doped titanium dioxide and aluminum oxide-based high-k gate insulators for MOSFET.
Utilized atomic layer deposition technique for material application.
Enhanced electrical performance due to the optimized gate insulator composition.
Improved interface characteristics as observed in MOSFET application tests.

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Implication

Examines high-k gate insulators in Ge-based MOSFET, suggesting improved performance.

Abstract

Atomic layer deposited TiO ₂ - and Al ₂ O ₃ -based high- k gate insulators (GIs) were examined for the Ge-based metal-oxide-semiconductor field effective transistor (MOSFET) application.

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Kim et al. (2021) studied this question.

synapsesocial.com/papers/6a619265dcbd73a1130a703e https://doi.org/10.1039/d0tc04725b

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Optimized Al-doped TiO ₂ gate insulator for a metal-oxide-semiconductor capacitor on a Ge substrate

Key Points

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Implication

Abstract

Discussion

Cite This Study

Optimized Al-doped TiO ₂ gate insulator for a metal-oxide-semiconductor capacitor on a Ge substrate

Key Points

Ask about this paper

Implication

Abstract

Discussion

Cite This Study

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