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July 23, 2026ElectronicsOpen Access

Performance Assessment of All-Optical NAND and XNOR Gates at 120 Gb/s Using a Single Optically Pumped Semiconductor Optical Amplifier Mach–Zehnder Interferometer

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Authors

AKAmer KotbKZKyriakos E. Zoiros

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Overview

Numerical investigation reveals superior performance of all-optical gates using a single OP-SOA-MZI, indicating potential for high-speed applications.

Key Points

  • This work aims to investigate the performance of all-optical NAND and XNOR gates using a single OP-SOA-MZI at high speeds.
  • Conducted numerical simulations of all-optical NAND and XNOR gates at 120 Gb/s.
  • Analyzed performance metrics, including quality factor (QF) and noise tolerance.
  • Examined sensitivity of QF to five operational parameters.
  • NAND gate achieved a QF of 28.6, while the XNOR gate had a QF of 18.7.
  • The OP-SOA-MZI consistently outperformed the EP-SOA-MZI, showing higher QF values.
  • Enhanced performance attributed to improved carrier replenishment and phase stability.

Cite This Study

Kotb et al. (2026) studied this question.

synapsesocial.com/papers/6a61b004faa9903c5116aa30https://doi.org/10.3390/electronics15143217
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