Highly Enhanced Inductive Current Sustaining Capability and Avalanche Ruggedness in GaN p-i-n Diodes With Shallow Bevel Termination

In this work, small-angle beveled-mesa termination technique was developed in GaN p-i-n power diodes for high avalanche performances. With effective alleviation of electric field crowding effect at the junction sidewall, near uniform distribution of avalanche breakdown was realized. Resultantly, state-of-the-art inductive avalanche current density of ~31.5 kA/cm 2 and average parallel-plane breakdown electric field of 2.86 MV/cm was achieved in the terminated diodes. Meanwhile, ruggedness of the avalanche breakdown has also been evidently promoted, under both repetitive dc reverse breakdown stresses and unclamped inductive switch conditions.