Investigating the energy level influence on the stability of phototransistor memory using the poly(siloxane-imide)/perovskite floating gate

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The energy level of the poly(siloxane-imide)/perovskite floating gate influences the stability of phototransistor memory devices. Novelty: ClaimNovelty.INCREMENTAL. Consensus alignment: ConsensusAlignment.NEUTRAL.

You-Wei Cao; Yu-Chih Hsu; Sheng-Wei Hsiao; Bi‐Hsuan Lin; Ming-Tao Lee; Yan‐Cheng Lin; Yang‐Yen Yu

doi:10.1039/d5tc02896e

November 18, 2025Journal of Materials Chemistry C

Investigating the energy level influence on the stability of phototransistor memory using the poly(siloxane-imide)/perovskite floating gate

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Abstract

Perovskite (PVSK) materials have emerged as promising photo-responsive elements in memory devices due to their strong light absorption, simple structure, and non-contact optical programmability.

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Cao et al. (2025) studied this question.

synapsesocial.com/papers/6a628e923d211cf3d3969fd5 https://doi.org/10.1039/d5tc02896e

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Investigating the energy level influence on the stability of phototransistor memory using the poly(siloxane-imide)/perovskite floating gate

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Investigating the energy level influence on the stability of phototransistor memory using the poly(siloxane-imide)/perovskite floating gate

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