Investigates acoustic resonators' performance in silicon substrates, suggesting enhanced efficiency via polarization adjustments.
Barium-doped Lead Zirconate Titanate Pb0.9Ba0.1(Zr0.53Ti0.47)O3 films with a (001)-dominant orientation were deposited on bulk silicon (Si) substrates using pulsed laser deposition (PLD). Due to the large electromechanical coupling coefficient (K2) of the P(B)ZT layer and the larger shear modulus of the Si substrate compared to the P(B)ZT film, it is possible to obtain higher-order acoustic-resonant modes (Sezawa mode) with SAW wavelength (λ)–piezoelectric film thickness (h) ratios below h/λ < 0.2. Due to the ferroelectric properties of the P(B)ZT film, the resonator’s performance can be improved by increasing the electric polarization. Consequently, the measured quality (Q) factors can be improved from 50 to 200 and the K2 values can be improved from 2 to 5% with the resonance frequency ranging from 275 to 500 MHz.
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Janssens et al. (2026) studied this question.
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