Fabrication and lasing characteristics of InGaAsP/InP distributed-feedback injection lasers are described. An InGaAsP active layer, a p-InP clad layer, and an n-InGaAsP cap layer are successively grown on an InP substrate with a 0.32-μm periodic corrugation. The diodes emit at a wavelength of 1.1 μm up to 170 K under pulsed operation. Single longitudinal mode oscillation and a small temperature dependence of the lasing wavelength of 0.054 nm/K are obtained in these diodes.
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Doi et al. (1979) studied this question.
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