A new fabrication method and characteristics of a rib-guide GaInAsP/InP DH laser are described. The active layer of the rib-guide structure is grown directly on a grooved InP substrate by one-step liquid phase epitaxy in which phosphorus vapor is introduced in order to prevent the decomposition of the substrate. Stable transverse-mode operation is obtained reproducibly up to 1.5 times threshold current. A preliminary life test indicates that the rib-guide lasers fabricated without a buffer layer should be as reliable as conventional lasers with a buffer layer.
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Doi et al. (1979) studied this question.
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