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This paper describes two CMOS bandgap reference circuits featuring dynamic-threshold MOS transistors. The first bandgap reference circuit aims at application in low-voltage, low-power ICs that tolerate medium accuracy. The circuit runs at supply voltages down to 0.85 V while consuming only 1 /spl mu/W; the die area is 0.063 mm/sup 2/ in a standard digital 0.35-/spl mu/m CMOS process. The second bandgap reference circuit aims at high accuracy operation (/spl sigma/=0.3%) without trimming. It consumes approximately 5 /spl mu/W from a 1.8-V supply voltage and occupies 0.06 mm/sup 2/ in a standard 0.35-/spl mu/m CMOS process.
Anne-Johan Annema (Thu,) studied this question.
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