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The interface-state buildup in wet-oxide MOS capacitors under positive bias was studied as a function of time following pulsed e-beam irradiation. The buildup was found to be a two-stage process. The first stage, which occurs during the time required for holes to transport to the SiO2/Si interface, determines the final or saturation value of interface states and was found to be field dependent and temperature independent. The second stage, which begins after the holes have reached the SiO2/Si interface and continues for several thousand seconds, determines the time scale for the buildup and was found to be both field and temperature dependent.
Winokur et al. (Tue,) studied this question.