RF characterization of 100‐nm separate gate InAlAs/InGaAs DG‐HEMT

This article presents a three port analysis for separate gate In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As DG‐HEMT and a small signal equivalent circuit is developed using charge control model. The various intrinsic short circuit admittance parameters (Y‐parameters) are evaluated to extract scattering parameters, to determine the maximum transducer power gain of the device.