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It was found that the switching in a memristor takes place with a time delay (this peculiar feature is named “the delayed switching”). This feature has been verified by a circuit-based experiment. The physical interpretation of this phenomenon is that an electron element possesses certain inertia, i.e., charge <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX"> q</tex></formula> or flux <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">φ</tex></formula> is inertial with the tendency to remain unchanged (settle to some equilibrium state). It cannot respond as rapidly as the fast variation in the excitation waveform and always takes a finite but small time interval to change its resistance value, as it must take place in a memristor or memristive system. In addition, a potential application of using this feature in ultradense computer memory has been discussed.
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Wang et al. (2010) studied this question.
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