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Demonstration reveals pulsed Raman laser emission using a silicon waveguide, indicating potential for efficient laser technology.
We report the demonstration of the first silicon Raman laser. Experimentally, pulsed Raman laser emission at 1675 nm with 25 MHz repetition rate is demonstrated using a silicon waveguide as the gain medium. The laser has a clear threshold at 9 W peak pump pulse power and a slope efficiency of 8.5%.
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Boyraz et al. (2004) studied this question.
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