An intrinsic intergap surface state associated with the occupied dangling-bond state is found on high-quality cleaved, p-type GaSb(110) surfaces. This conclusion is derived from a high precision analysis of angle-resolved photoemission data taken with high energy and momentum resolution as well as high absolute accuracy with synchrotron and He?ize -2 roman I--- radiation. Thus GaSb is besides GaP the second exception to the accepted rule that III-V's do not have such states.
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Manzke et al. (1987) studied this question.
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