GaSb Surfaces States and Schottky-Barrier Pinning

Photoemission measurements on GaSb indicate no surface states in the band gap. Deposition of Cs to form a Schottky barrier on n-GaSb moves the Fermi level 0.55 eV and produces pinning within the band gap. Thus, for the first time, Schottky-barrier pinning without the presence of intrinsic surface states in the gap is directly demonstrated.