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Soft x-ray photoelectron spectroscopy with synchrotron radiation was employed to study the valence-band offsets for the HfO2/SiO2/Si and HfO2/SiOxNy/Si systems. We obtained a valence-band offset difference of −1.05±0.1 eV between HfO2 (in HfO2/15 Å SiO2/Si) and SiO2 (in 15 Å SiO2/Si). There is no measurable difference between the HfO2 valence-band maximum positions of the HfO2/10 Å SiOxNy/Si and HfO2/15 Å SiO2/Si systems.
Sayan et al. (Mon,) studied this question.