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April 3, 2000Applied Physics Letters

Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing

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Authors

BLByoung Hun LeeLKLaegu KangRNR. Nieh

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Lee et al. (2000) studied this question.

synapsesocial.com/papers/6a8384f26abe336c4339cb96https://doi.org/10.1063/1.126214
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