Stable ferroelectric properties of Hf 0.5 Zr 0.5 O ₂ thin films within a broad working temperature range

The ferroelectric properties of 20 nm Hf 0.5 Zr 0.5 O 2 (HZO) thin films has been investigated in a wide temperature range from 100 K to 450 K. The remnant polarization of HZO thin films decreases slightly from 24.6 μ C cm −2 (100 K) to 17.9 μ C cm −2 (450 K), indicating a robust temperature stability. The capacitors also exhibit excellent endurance properties up to 10 9 cycles at 100 K and 300 K, and their endurance cycles slightly degrades to 10 8 at an elevated temperature of 450 K. The results show that HZO ferroelectric thin films have great potential for future emerging memory applications in various harsh temperature environments.