Enhanced Polarization, Endurance, and Long Retention in Low Temperature Processed W/Hf0.5Zr0.5O₂/W Ferroelectric Capacitor for Back-End-of-Line Integration

Low thermal budget of Atomic Layer Deposited Hf <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5</inf> Zr <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5</inf> O <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> (HZO) ferroelectric capacitors have been studied for memory applications. Annealing time (tₐₙₙₑₐₗ) has been varied in a Rapid Thermal Process as a crystallization method of the HZO film. W/HZO/W capacitors were fabricated and annealed at 450°C in N <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> with various tₐₙₙₑₐₗ. Consequently, very high remnant polarization ~ 62 μ C/cm² with low coercive field (2Ec~ 2.28MV/cm), robust endurance and long retention were realized by increasing tₐₙₙₑₐₗ.