Recorded Ferroelectric Polarization Switching of Hf0.5Zr0.5O₂ Capacitors Achieved by Thermal Rewake-up

Hf <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5</inf> Zr <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5</inf> O <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> (HZO) capacitors are well prepared with excellent ferroelectricity, and recorded polarization switching (PSw)=30.5/cm² is achieved by the proposed "thermal rewake-up" (TR) operations and a large single orthorhombic phase (O-phase) grain in 40-nm long region has been demonstrated correspondingly. Oxygen diffusion region can be observed in HZO capacitors with TR operation. Meanwhile, the TR operation of ferroelectric enhancement shows no degradation of endurance of HZO capacitors, indicating the possibility to be widely used.